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CEF35P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEF35P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF35P10A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-100V,-32A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP35P10

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -100V,-32A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=92mW@VGS=-4.5V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP35P10A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. Applications Switchedmodepowersupplies. Lighting. DCMotorcontrol. Loadswitch. batterypowered.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

TCH35P10ROJE

VeryLowInductanceDesign

OHMITEOHMITE MANUFACTURING COMPANY

歐敏歐敏電阻制造公司

TCH35P10ROJE

35WattTO220PackageThickFilmPower

OHMITEOHMITE MANUFACTURING COMPANY

歐敏歐敏電阻制造公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CEF35P10

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    P-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TE
2022+
1000
只做原裝，可提供樣品
 詢價(jià)
TE
22+
NA
518000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
Murata Power Solutions
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
LT
23+
2800
正品原裝貨價(jià)格低
 詢價(jià)
LT
2023+
3000
進(jìn)口原裝現(xiàn)貨
 詢價(jià)
CET/華瑞
23+
TO-220F
10000
公司只做原裝正品
 詢價(jià)
C
TO-220F
22+
6000
十年配單,只做原裝
 詢價(jià)
CET/華瑞
23+
TO-220F
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
C
23+
TO-220F
6000
原裝正品，支持實(shí)單
 詢價(jià)
apec
2023+
TO-220F
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
更多CEF35P10供應(yīng)商 更新時(shí)間2025-1-11 10:02:00

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