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CEZC8R04

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,47A,RDS(ON)=7.4mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=12mW@VGS=4.5V. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ8R04

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 40V,49A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Pb-freeleadplating;RoHScompliant. HalogenFree. RDS(ON)=12mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ8R04

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 40V,49A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Pb-freeleadplating;RoHScompliant. HalogenFree. RDS(ON)=12mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZ8R04

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 40V,49A,RDS(ON)=7.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Pb-freeleadplating;RoHScompliant. HalogenFree. RDS(ON)=12mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

STTH8R04

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STTH8R04D

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STTH8R04DI

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STTH8R04FP

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STTH8R04G

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STTH8R04G-TR

Ultrafastrecoverydiode

Description TheSTTH8R04seriesusesSTsnew400VplanarPtdopingtechnology.TheSTTH8R04isspeciallysuitedforswitchingmodebasedriveandtransistorcircuits. Packagedinthrough-the-holeandsurfacemountpackages,thisdeviceisintendedforuseinlowvoltage,highfrequencyinverter

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

供應商型號品牌批號封裝庫存備注價格
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更多CEZC8R04供應商 更新時間2025-2-3 16:20:00