CGH60120D中文資料科銳數(shù)據(jù)手冊PDF規(guī)格書
CGH60120D規(guī)格書詳情
Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
? 13 dB Typical Small Signal Gain at 4 GHz
? 12 dB Typical Small Signal Gain at 6 GHz
? 120 W Typical PSAT
? 28 V Operation
? High Breakdown Voltage
? High Temperature Operation
? Up to 6 GHz Operation
? High Effciency
APPLICATIONS
? 2-Way Private Radio
? Broadband Amplifers
? Cellular Infrastructure
? Test Instrumentation
? Class A, AB, Linear amplifers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
CREE |
2023+ |
DQ |
8700 |
原裝現(xiàn)貨 |
詢價 | ||
Cree/Wolfspeed |
21+ |
Die |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
CREE |
24+ |
SMD |
1680 |
一級代理原裝進口現(xiàn)貨 |
詢價 | ||
CORNELLDUBILIER-CDE |
2020+ |
Bulk |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
Cornell-Dubilier |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
Cree/Wolfspeed |
22+ |
Die |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
CREE |
24+ |
N/A |
90000 |
進口原裝現(xiàn)貨假一罰十價格合理 |
詢價 | ||
CREE |
18+ |
SMD |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
CREE |
638 |
原裝正品 |
詢價 | ||||
CREE/科銳 |
2021+ |
20 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |
