CMPA2060035F1中文資料WOLFSPEED數(shù)據(jù)手冊PDF規(guī)格書

Description

Wolfspeed’s CMPA2060035F1 is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN

has superior properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity and higher thermal

conductivity. GaN HEMTs also offer greater power density and wider bandwidths

compared to Si and GaAs transistors. This MMIC contains a two-stage 50-ohm

matched amplifier, enabling very wide bandwidths to be achieved, in a small

0.5” square, screw-down package.

Features

? >30 Typical Power Added Efficiency

? 30 dB Small Signal Gain

? 36W Typical PSAT

? Operation up to 28 V

? High Breakdown Voltage

? High Temperature Operation

Note: Features represent typical performance

across multiple frequencies under 25°C operation.

Please reference the performance charts for

additional details.

Applications

? Civil and Military Pulsed Radar

Amplifiers

? Test Instrumentation

? Electronic Warfare Jamming