CMPA2735075F1開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板規(guī)格書PDF中文資料

CMPA2735075F1屬于開發(fā)板套件編程器的射頻評估開發(fā)套件開發(fā)板。由WOLFSPEED, INC.制造生產的CMPA2735075F1射頻評估和開發(fā)套件，開發(fā)板本系列中的產品適用于在已知實施環(huán)境中，提供能訪問射頻相關器件的功能或者有助于訪問該功能。所含的焦點產品范圍從射頻信號鏈元器件（如放大器和檢測器）到模塊化收發(fā)器，以及不直接包含焦點產品的適配器硬件，但此類硬件可供方便地訪問用戶單獨提供的特定射頻產品或系列。

Description

Wolfspeed’s CMPA2735075F1 is a gallium nitride (GaN) High

Electron Mobility Transistor (HEMT) based monolithic microwave

integrated circuit (MMIC). GaN has superior properties compared

to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density

and wider bandwidths compared to Si and GaAs transistors. This

MMIC contains a two-stage reactively matched amplifier design

approach enabling very wide bandwidths to be achieved.

Features

? 29 dB Small Signal Gain

? 76 W Typical PSAT

? 28 V Operation

? High Breakdown Voltage

? High Temperature Operation

? 0.5” x 0.5” Total Product Size

Applications

? Civil and Military Pulsed

Radar Amplifiers