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CMT01N60N251中文資料虹冠數(shù)據(jù)手冊(cè)PDF規(guī)格書

CMT01N60N251
廠商型號(hào)

CMT01N60N251

功能描述

POWER FIELD EFFECT TRANSISTOR

文件大小

288.4 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Champion Microelectronic Corp.
企業(yè)簡(jiǎn)稱

CHAMP虹冠

中文名稱

虹冠電子工業(yè)股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-30 23:00:00

CMT01N60N251規(guī)格書詳情

GENERAL DESCRIPTION

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

FEATURES

◆ Robust High Voltage Termination

◆ Avalanche Energy Specified

◆ Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

◆ Diode is Characterized for Use in Bridge Circuits

◆ IDSS and VDS(on) Specified at Elevated Temperature

產(chǎn)品屬性

  • 型號(hào):

    CMT01N60N251

  • 功能描述:

    POWER FIELD EFFECT TRANSISTOR

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
CHAMPION
23+
NA/
3600
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
CHAMPIO
2020+
TO-92
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
24+
N/A
70000
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
CHAMPION
22+
TO-92
100000
代理渠道/只做原裝/可含稅
詢價(jià)
CHAMPION
21+
TO-92
3600
原裝現(xiàn)貨假一賠十
詢價(jià)
CHAMPION
TO-92
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
APEC
22+
TO-220
8900
英瑞芯只做原裝正品!!!
詢價(jià)
CET
22+
TO-
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
CHAMP
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
詢價(jià)
E
23+
TO-
10000
公司只做原裝正品
詢價(jià)