CMT07N60中文資料ETC數(shù)據(jù)手冊(cè)PDF規(guī)格書
CMT07N60規(guī)格書詳情
[Champion Microelectronic Corporation]
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES
? Robust High Voltage Termination
? Avalanche Energy Specified
? Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS Specified at Elevated Temperature
產(chǎn)品屬性
- 型號(hào)：
CMT07N60
- 功能描述：
POWER FIELD EFFECT TRANSISTOR
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VBsemi |
24+ |
TO220 |
11000 |
原裝正品 有掛有貨 假一賠十 |
詢價(jià) | ||
E |
22+ |
TO- |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
CHAMP |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價(jià) | ||
E |
23+ |
TO- |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
VBsemi |
21+ |
TO220 |
10026 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
E |
22+ |
TO- |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
VBsemi |
2237+ |
TO220 |
3025 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
VBsemi |
23+ |
原裝正品現(xiàn)貨 |
10000 |
TO220 |
詢價(jià) | ||
VBsemi |
23+ |
TO220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
- |
23+ |
NA |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) |
