首頁 >CMU60N03>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS30V RDSON(MAX.)60mΩ ID3.2A Pb‐FreeLeadPlating&HalogenFree ESDProtection | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
30V-ChannelMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半導體深圳市福斯特半導體有限公司 | FOSTER | ||
N-ChannelLogicLevelPWMOptimizedPowerMOSFET | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.0135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelLogicLevelMOSFETs30V,30A,0.023ohm GeneralDescription ThisdeviceemploysadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowonresistance.Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. F | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40.3A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.019Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
30VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?60A,30V.RDS(on)=0.0135?@VGS=10V ?Lowgatecharge(typical18.5nC) ?LowCrss(typical155pF) ?Fa | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
30VLOGICN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheGE60N03providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsandsuitedforlowvoltageapplicationsuchas | GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司 | GTM |
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