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CPC5602C中文資料IXYS數(shù)據(jù)手冊(cè)PDF規(guī)格書

CPC5602C
廠商型號(hào)

CPC5602C

功能描述

N-Channel Depletion Mode FET

文件大小

112.77 Kbytes

頁(yè)面數(shù)量

5 頁(yè)

生產(chǎn)廠商 IXYS Corporation
企業(yè)簡(jiǎn)稱

IXYS

中文名稱

IXYS Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-25 22:30:00

CPC5602C規(guī)格書詳情

Description

The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly in difficult application environments such as telecommunications, security, and power supplies.

Features

? 350V Drain-to-Source Voltage

? Depletion Mode Device Offers Low RDS(on) at Cold Temperatures

? Low On-resistance: 8Ω (Typical) @ 25°C

? Low VGS(off) Voltage: -2.0V to -3.6V

? High Input Impedance

? Low Input and Output Leakage

? Small Package Size SOT-223

? PC Card (PCMCIA) Compatible

? PCB Space and Cost Savings

Applications

? Support Component for LITELINK? Data Access Arrangement (DAA)

? Telecommunications

? Normally On Switches

? Ignition Modules

? Converters

? Security

? Power Supplies

產(chǎn)品屬性

  • 型號(hào):

    CPC5602C

  • 功能描述:

    MOSFET MOSFET N-CHANNEL 350V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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2020+
SOT-223
80000
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IXYS/艾賽斯
23+
NA/
55
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CPC
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SOT223
20000
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CLARE
23+
SOT-223
63000
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CPCLARE
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NA
1386
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IXYS
SOT223
68900
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CLARE
24+
SOT-223
6337
新進(jìn)庫(kù)存/原裝
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LIIELINK
23+
TO263
7000
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CLARE
24+
SOT-223
16800
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Clare
22+
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1000
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