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5H11G

PowerTransistor80V,8ADualGeneralPurposePNP

Designedforgeneralpurposepowerandswitchingapplications suchasregulators,convertersandpoweramplifiers.Housed inadvancedLFPAKpackage(5x6mm)withexcellentthermal conduction.Automotiveendapplicationsincludeairbagdeployment, powertraincontrolunits,andinstrumentcl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

M-FIAM5H11

Military28VinFilterInputAttenuatorModule

Vicor

Vicor Corporation

RU5H11P

N-ChannelAdvancedPowerMOSFET

RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd

銳駿半導(dǎo)體深圳銳駿半導(dǎo)體股份有限公司

SSM5H11TU

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM5H11TU

SiliconNChannelMOSType(U-MOS3)/SiliconEpitaxialSchottkyBarrierDiode

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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