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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
DAM10N100S	文件：236.42 Kbytes Page：4 Pages	N-Channel Enhancement Mode MOSFET	DACO DACO SEMICONDUCTOR CO.,LTD.	DACO
FLX10N100	文件：109.45 Kbytes Page：2 Pages	HighVoltagePowerSupplies	TDKTDK Corporation TDK株式會社東電化（中國）投資有限公司	TDK
IXFH10N100	文件：82.12 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFH10N100	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFH10N100P	文件：183.7 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications: ?Switched-modeandresonant-modepow	IXYS IXYS Corporation	IXYS
IXFH10N100P	文件：164.95 Kbytes Page：6 Pages	PowerMOSFET	IXYS IXYS Corporation	IXYS
IXFH10N100P	文件：372.09 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH10N100Q	文件：372.03 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH10N100Q	文件：146.65 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETsQClass Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●	IXYS IXYS Corporation	IXYS
IXFM10N100	文件：316.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFM10N100	文件：82.12 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM10N100	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFR10N100	文件：308.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR10N100F	文件：91.92 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247 HiPerFET?PowerMOSFETsISOPLUS247?F-Class:MegaHertzSwitching(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSw	IXYS IXYS Corporation	IXYS
IXFR10N100Q	文件：33.66 Kbytes Page：2 Pages	N-ChannelEnhancementModeAvalancheRated,HighdV/dtLowGateChargeandCapacitances HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface	IXYS IXYS Corporation	IXYS
IXFR10N100Q	文件：160.52 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247QCLASS HiPerFET?PowerMOSFETsISOPLUS247?QCLASS(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface	IXYS IXYS Corporation	IXYS
IXFT10N100	文件：556.28 Kbytes Page：4 Pages	N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackage ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?FastintrinsicRectifier Applications ?DC-DCconverters ?Synchronou	IXYS IXYS Corporation	IXYS
IXFT10N100Q	文件：146.65 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETsQClass Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ●	IXYS IXYS Corporation	IXYS
IXFV10N100P	文件：183.7 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications: ?Switched-modeandresonant-modepow	IXYS IXYS Corporation	IXYS
IXFV10N100PS	文件：183.7 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications: ?Switched-modeandresonant-modepow	IXYS IXYS Corporation	IXYS

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
瀚佳科技(深圳)有限公司	DAM-11W18	ITT	24+		35200	一級代理/放心采購	詢價
深圳市利加科技有限公司	DAM11W1P	ITTC	16+	NA	8800	原裝現(xiàn)貨,貨真價優(yōu)	詢價
深圳市歐立現(xiàn)代科技有限公司	DAM11W1P	ITTC	24+	NA	3500	原裝現(xiàn)貨,可開13%稅票	詢價
深圳市維爾達(dá)電子有限公司	DAM11W1P	ITTC	2023+		80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	DAM11W1P	ITTC	23+		10000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
天津市博通航睿技術(shù)有限公司	DAM11W1P	ITTC	1116		1	優(yōu)勢貨源原裝正品	詢價
深圳市科恒偉業(yè)電子有限公司	DAM11W1P300N	AMPHENOLICCFCI	23+	NA	6540	只做原裝正品現(xiàn)貨或者訂貨假一賠十!	詢價
深圳市閱創(chuàng)想科技有限公司	DAM11W1P300N	Amphenol/安費諾	24+		39351	原廠現(xiàn)貨渠道	詢價
深圳市科雨電子有限公司	DAM11W1PA	ITT	20+	連接器	493	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市億順芯科技有限公司	DAM11W1PN	Amphenol ICC	2021+	公插	285000	專供連接器,軍工合格供應(yīng)商!	詢價

更多DAM10N100S供應(yīng)商更新時間2025-1-10 16:50:00

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