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ET-22N60

N-ChannelMOSFET

ESTEKEstek Electronics Co. Ltd

伊泰克電子北京伊泰克電子有限公司

FCA22N60N

N-ChannelMOSFET600V,22A,0.165W

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCA22N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=165mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FCH22N60N

UltraLowGateCharge(Typ.Qg=45nC),LowEffectiveOutputCapacitance(Typ.Coss.eff=196.4pF)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP22N60N

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FCP22N60N

N-ChannelMOSFET600V,22A,0.165W

Description TheSupreMOS?MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCPF22N60NT

N-ChannelMOSFET600V,22A,0.165W

Description TheSupreMOS?MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

ICE22N60

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

ICE22N60

N-ChannelEnhancementModeMOSFET

ICEMOS

Icemos Technology

ICE22N60W

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

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23+
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80000
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70000
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IXYS
24+
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8866
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IXYS
23+
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8600
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IXYS
2023+
TO-220AB
80000
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JD/晶導(dǎo)
23+
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69820
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更多DHESJ22N60供應(yīng)商 更新時(shí)間2025-1-24 9:30:00