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Si4737

BROADCASTMULTI-BANDRADIORECEIVER

SILABS

Silicon Laboratories

SI4737

Si470X/1X/2X/3X/4XEVALUATIONBOARDTESTPROCEDURE

Introduction ThepurposeofthisdocumentistodescribethetestproceduresusedinSiliconLaboratoriesfortheSi470x/1x/2x/3x/4xevaluationboards(EVB).ItisalsointendedtoenablecustomerstoexactlyreplicateSiliconLaboratories’testenvironmentsothatvariancesincustomers’andS

SILABS

Silicon Laboratories

Si4737

ThankyouforpurchasingtheSiliconLaboratories

SILABS

Silicon Laboratories

SI4737

Si47XXANTENNA,SCHEMATIC,LAYOUT,ANDDESIGNGUIDELINES

Introduction ThisdocumentprovidesgeneralSi47xxdesignguidelinesandAM/FM/SW/LW/WBantennaselectionswhichincludesschematic,BOM,layoutanddesignchecklist.AllusersshouldfollowtheSi47xxdesignguidelinespresentedinSection2andthenuserscanproceedtotheappropriateantenn

SILABS

Silicon Laboratories

SI4737

Si47XXPROGRAMMINGGUIDE

SILABS

Silicon Laboratories

SMA4737

1.0WattsSurfaceMountZenerDiode

VOLTAGE6.2V~100V ●FEATURES .Forsurfacemountedapplications .1.0Wpowerdissipation .Lowreversecurrent .Ideallysuitedforautomatedassemblyprocesses .Epitaxialconstruction

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SMA4737

1.0WattsSurfaceMountZenerDiode

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SMA4737A

ZenerDiodes

■Features ●Ptot1.0W ●Vz3.3V-100V ■Applications ●StabilizingVoltage

YANGJIEYangzhou yangjie electronic co., ltd

揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司

SMA4737A

SMA4728A-SZ1330ASeriesVZ:3.3To330VPD:1W

Features ◆Glasspassivatedchip ◆Lowleakage ◆Built-instrainrelief ◆Lowinductance ◆Highpeakreversepowerdissipation ◆Lead-Freecomponent ◆Foruseinstabilizingandclippingwithhighpowerrating

SOCAYSocay Electornics Co., Ltd.

碩凱電子碩凱電子股份有限公司

SMA4737A

1WGLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

FEATURES ●Glasspassivatedchip ●Lowleakage ●Built-instrainrelief ●Lowinductance ●Highpeakreversepowerdissipation ●Lead(Pb)-freecomponent ●Foruseinstabilizingandclippingcircuitswithhighpower

CHENG-YICHENG-YI ELECTRONIC CO., LTD.

辰頤電子辰頤電子有限公司

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