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DMN2230U

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?110mΩ@VGS=4.5V ?145mΩ@VGS=2.5V ?230mΩ@VGS=1.8V ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes1,2and3) ?QualifiedtoAEC-Q101

DIODES

Diodes Incorporated

DMN2230U

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowOn-Resistance ?110mΩ@VGS=4.5V ?145mΩ@VGS=2.5V ?230mΩ@VGS=1.8V ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes1,2and3) ?QualifiedtoAEC-Q101

ZPSEMI

ZP Semiconductor

DMN2230U-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ?LowOn-Resistance ?110mΩ@VGS=4.5V ?145mΩ@VGS=2.5V ?230mΩ@VGS=1.8V ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes1,2and3) ?QualifiedtoAEC-Q101

DIODES

Diodes Incorporated

DMN2230UQ

N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?GeneralPurposeInterfacingSwitch ?PowerManagementFunctions ?BoostAppli

DIODES

Diodes Incorporated

DMN2230U_15

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

Diodes Incorporated

DSC2230

Low-JitterI2C/SPIProgrammableLVDSOscillator

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

FB2230

POLYETHYLENEBorstar

DESCRIPTION Borstar?FB2230isproducedusingtheproprietaryBorstar?bimodaltechnologyresultingineasyextrusionwith superiormechanicalproperties.Filmmadefromtheproductexhibitsexcellentmechanicalstrengthatnormalas wellaslowtemperature,goodsealingpropertiesandsuperior

BOROUGEBOROUGE PTE. LTD.

博祿博祿化工

FN2230

DC-BusbarEMC/RFIFilterforEVchargingapplications

Featuresandbenefits -FN222X,FN223XandFN224Xseriesoffilters providesstate-of-the-artEMIattenuationwitha choiceofthreeperformancelevels -ThefiltersarebuilttofitperfectlytohighpowerEV chargingapplications -Theshapeallowsaconvenientandspace-saving installation

SCHAFFNER

Schaffner International Ltd

HUN2230

NPNSiliconSurfaceMountTransistorwithMonolithicBiasResistorNetwork

Description Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamonolithicbiasnetworkconsistingoftworesistors;aseriesbaseresistorandabase-emitterr

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

IPP-2230

OUTLINECOUP

IPP

Innovative Power Products, Inc.

詳細參數(shù)

  • 型號：

    DMN2230U

  • 制造商：

    DIODES

  • 制造商全稱：

    Diodes Incorporated

  • 功能描述：

    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
DIODES
24+
30000
詢價
DIODES/美臺
22+
SOT23
90000
正規(guī)代理渠道假一賠十
 詢價
Diodes
19+
SOT-23
200000
詢價
Diodes
2023+
SOT-23
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
Diodes
24+
SOT-23
18800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!
 詢價
DIODES/美臺
2021+
SOT23
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
DIODES/美臺
23+
SOT23
12000
原裝正品假一罰百!可開增票!
 詢價
DIODES/美臺
2022+
SOT-23
50000
原廠代理 終端免費提供樣品
 詢價
DIODES
SOT-23
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
DIODES/美臺
22
SOT23
30000
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價
更多DMN2230U供應(yīng)商 更新時間2025-2-4 16:30:00

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