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DR

型號(hào):2PB1219AR;Package:SOT323;PNP general purpose transistor

FEATURES ?Highcurrent(max.500mA) ?Lowvoltage(max.50V) ?Lowcollector-emittersaturationvoltage(max.600mV).

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

DR

型號(hào):2PB710AR;Package:SC-59;PNP general purpose transistor

FEATURES ?Highcurrent(max.500mA) ?Lowvoltage(max.50V).

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

DR

型號(hào):2SD2212;Package:SOT-89;Medium Power Transistor(Motor, Relay drive) (60?10V, 2A)

Features 1)Built-inzenerdiodebetweencollectorandbase. 2)StrongprotectionagainstreversesurgesduetoLloads. 3)Built-inresistorbetweenbaseandemitter. 4)Built-indamperdiode.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DR

型號(hào):4.0SMF75A;Package:SOD-123;3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glasspassivatedchip 400Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01% TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. MeetAEC-Q101require

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

DR

型號(hào):6.0SMAJ75CA;Package:DO-214AC;5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glasspassivatedchip 600Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260°C/10satterminals. RoHScompliant Features

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

DR

型號(hào):BCW60BR;Package:SOT-23;SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS

SOT23NPNSILICONPLANARSMALLSIGNALTRANSISTORS

Zetex

Zetex Semiconductors

DR

型號(hào):BD4835;Package:SSOP5;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DR

型號(hào):BD4835FVE-TL;Package:VSOF5;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DR

型號(hào):BD4835FVE-TL;Package:VSOF5;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DR

型號(hào):BD4835FVE-TL;Package:VSOF5;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    DR

  • 功能描述:

    TVS 二極管 - 瞬態(tài)電壓抑制器 75Vr 600W 5A 5% BiDirectional

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 極性:

    Bidirectional

  • 擊穿電壓:

    58.9 V

  • 鉗位電壓:

    77.4 V

  • 峰值浪涌電流:

    38.8 A

  • 封裝/箱體:

    DO-214AB

  • 最小工作溫度:

    - 55 C

  • 最大工作溫度:

    + 150 C

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更多DR供應(yīng)商 更新時(shí)間2025-7-30 11:04:00