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DS1250Y

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250Y-100

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250Y-70

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250YL-100

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250YL-100-IND

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250YL-70

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250YL-70-IND

4096K Nonvolatile SRAM

DESCRIPTION TheDS12504096KNonvolatileSRAMsare4,194,304–bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250YP-100-IND

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250YP-70-IND

4096k Nonvolatile SRAM

DESCRIPTION TheDS12504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1250Y-70+

4096k Nonvolatile SRAM

MaximMaxim Integrated Products

美信美信半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    DS1250Y

  • 功能描述:

    NVRAM 4096K NV SRAM

  • RoHS:

  • 制造商:

    Maxim Integrated

  • 數(shù)據(jù)總線寬度:

    8 bit

  • 存儲(chǔ)容量:

    1024 Kbit

  • 組織:

    128 K x 8

  • 接口類型:

    Parallel

  • 訪問時(shí)間:

    70 ns

  • 電源電壓-最大:

    5.5 V

  • 電源電壓-最?。?/span>

    4.5 V

  • 工作電流:

    85 mA

  • 最大工作溫度:

    + 70 C

  • 最小工作溫度:

    0 C

  • 封裝/箱體:

    EDIP

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
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1000
自己公司全新庫存絕對(duì)有貨
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23+
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9896
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DALLAS
23+
DIP
5000
原裝正品,假一罰十
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DALLAS
1824+
DIP32
2000
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DALLAS
23+
DIP32
65480
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2023+
05+
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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DALLAS
22+
PDIP
12245
現(xiàn)貨,原廠原裝假一罰十!
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DALLAS
23+
DIP
38172
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
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23+
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5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
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DALLAS
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
更多DS1250Y供應(yīng)商 更新時(shí)間2025-1-23 10:32:00