DS1350Y集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料
廠商型號(hào) |
DS1350Y |
參數(shù)屬性 | DS1350Y 封裝/外殼為34-LPM;包裝為管件;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC NVSRAM 4MBIT PARALLEL 34LPM |
功能描述 | 4096k Nonvolatile SRAM with Battery Monitor |
封裝外殼 | 34-LPM |
文件大小 |
228.66 Kbytes |
頁面數(shù)量 |
12 頁 |
生產(chǎn)廠商 | Dallas Semiconductor |
企業(yè)簡(jiǎn)稱 |
Dallas【亞德諾】 |
中文名稱 | 亞德諾半導(dǎo)體官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-1-13 13:45:00 |
DS1350Y規(guī)格書詳情
DESCRIPTION
The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Additionally, the DS1350 devices have dedicated circuitry for monitoring the status of VCC and the status of the internal lithium battery. DS1350 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. The devices can be used in place of 512k x 8 SRAM, EEPROM or Flash components.
FEATURES
■ 10 years minimum data retention in the
absence of external power
■ Data is automatically protected during power loss
■ Power supply monitor resets processor when
VCC power loss occurs and holds processor in
reset during VCC ramp-up
■ Battery monitor checks remaining capacity
daily
■ Read and write access times as fast as 70 ns
■ Unlimited write cycle endurance
■ Typical standby current 50 μA
■ Upgrade for 512k x 8 SRAM, EEPROM or
Flash
■ Lithium battery is electrically disconnected to
retain freshness until power is applied for the
first time
■ Full ±10 VCC operating range (DS1350Y)
or optional ±5 VCC operating range
(DS1350AB)
■ Optional industrial temperature range of
-40°C to +85°C, designated IND
■ New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides
lithium backup battery
- Standardized pinout for all nonvolatile
SRAM products
- Detachment feature on PowerCap allows
easy removal using a regular screwdriver
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
DS1350YL-70
- 制造商:
Analog Devices Inc./Maxim Integrated
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
管件
- 存儲(chǔ)器類型:
非易失
- 存儲(chǔ)器格式:
NVSRAM
- 技術(shù):
NVSRAM(非易失性 SRAM)
- 存儲(chǔ)容量:
4Mb(512K x 8)
- 存儲(chǔ)器接口:
并聯(lián)
- 寫周期時(shí)間 - 字,頁:
70ns
- 電壓 - 供電:
4.5V ~ 5.5V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
34-LPM
- 供應(yīng)商器件封裝:
34-LPM
- 描述:
IC NVSRAM 4MBIT PARALLEL 34LPM
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Maxim Integrated |
23+ |
34-PowerCap 模塊 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
Maxim |
22+ |
34PowerCap Module |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
DALLAS |
24+ |
DIP |
4500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
DALLAS |
2023+ |
34-PCM |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
DALLAS |
2405+ |
原廠封裝 |
12500 |
15年芯片行業(yè)經(jīng)驗(yàn)/只供原裝正品:0755-83267371鄒小姐 |
詢價(jià) | ||
DALLAS |
23+ |
PWRCP |
5177 |
現(xiàn)貨 |
詢價(jià) | ||
Maxim Integrated |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價(jià) | ||
DALLAS |
2402+ |
34 |
8324 |
原裝正品!實(shí)單價(jià)優(yōu)! |
詢價(jià) | ||
2023+ |
3000 |
進(jìn)口原裝現(xiàn)貨 |
詢價(jià) | ||||
DALLAS |
23+ |
34-PCM |
45936 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) |