EMB10

Marking：B10；Package：EMT6；General purpose (dual digital transistors)

Features 1)TwoDTA123JchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFACE,DRIVE

EMB10FHA

Marking：B10；Package：EMT6；PNP -100mA -50V Complex Digital Transistors

lFeatures 1)Built-InBiasingResistors. 2)TwoDTA123Jchipsinonepackage. 3)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 4)Thebiasresistorsconsistofthin-filmresistors withcompleteisolat

EMB11

Marking：B11；Package：EMT6；General purpose (dual digital transistors)

Features 1)TwoDTA114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf.

EMB11

Marking：B11；Package：EMT6；PNP -100mA -50V Complex Digital Transistors

Features 1)TwoDTA114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf.

EMB11

Marking：B11；Package：EMT6；General purpose Dual digital transistors

Features 1)TwoDTA114EchipsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3automaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf.

EMB11A03G

Dual N??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS30V RDSON(MAX.)11mΩ ID12A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB12K03GP

Dual Asymmetric N??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: N‐CH‐Q1N‐CH‐Q2 BVDSS30V30V RDSON(MAX.)15.5mΩ12.5mΩ ID9A10A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB12K03V

Dual N??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: N‐CH‐Q1N‐CH‐Q2 BVDSS30V30V RDSON(MAX.)12mΩ17mΩ ID12A10A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB12N03A

N??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS30V RDSON(MAX.)12mΩ ID25A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EMB12N03G

N??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS30V RDSON(MAX.)12mΩ ID12A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree