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NP60N06PDK

60V–60A–N-channelPowerMOSFETApplication:Automotive

Description NP60N06PDKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=7.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N06PLK

60V??60A??N-channelPowerMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N06PLK

60V–60A–N-channelPowerMOSFETApplication:Automotive

Description NP60N06PLKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=7.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N06VDK

60V??60A??N-channelPowerMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N06VDK

60V–60A–N-channelPowerMOSFETApplication:Automotive

Description NP60N06VDKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=7.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N06VLK

60V??60A??N-channelPowerMOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP60N06VLK

60V–60A–N-channelPowerMOSFETApplication:Automotive

Description NP60N06VLKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)1=7.9m?MAX.(VGS=10V,ID=30A) ?LowCiss:Ciss=2400pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NTB60N06

60V,60A,N-ChannelTO-220andD2PAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB60N06

MOSFET–Power,N-Channel,D2PAK60V,60A

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features ?AEC?Q101QualifiedandPPAPCapable?NVB60N06 ?TheseDevicesarePb?FreeandareRoHSCompliant TypicalApplications ?PowerSupplies ?C

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTB60N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
EMC
1716+
TO251
8660
只做原裝進口,假一罰十
 詢價
EMC/杰力
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
EMC/杰力
24+
TO-251
15000
原裝現(xiàn)貨假一賠十
 詢價
EMC/杰力
23+
TO-251
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
EMC/杰力
24+
NA/
10000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
EMC/杰力
23+
TO-251
6000
專注配單,只做原裝進口現(xiàn)貨
 詢價
EMC/杰力
23+
TO-251
6000
專注配單,只做原裝進口現(xiàn)貨
 詢價
EMC/杰力
25+
TO-251
5999
原裝正品,假一罰十!
 詢價
EMC/杰力
24+
TO-251
60000
詢價
EMC/杰力
23+
DFN5X6
7000
詢價
更多EMB60N06C供應(yīng)商 更新時間2025-5-24 15:10:00

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