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HCTS574D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo

Intersil

Intersil Corporation

HCTS574DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo

Intersil

Intersil Corporation

HCTS574HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo

Intersil

Intersil Corporation

HCTS574K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
國興GOODSKY
24+
6180
全新原裝
 詢價
GOODSKY
2023+環(huán)?，F(xiàn)貨
專業(yè)繼電器
6800
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
DIP
24+
開關(guān)
56800
特價現(xiàn)貨,下單送華為手機.香港 日本 新加坡
 詢價
FUJI/富士電機
23+
MODULE
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FUJI
23+
DIP
5177
現(xiàn)貨
 詢價
FUJI
23+
25630
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
FUJI
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
 詢價
FUJI
23+
原廠正規(guī)渠道
5000
專注配單,只做原裝進口現(xiàn)貨
 詢價
Artesyn
22+
NA
2265
加我QQ或微信咨詢更多詳細信息,
 詢價
雅特生
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
更多EMQN574T供應(yīng)商 更新時間2025-5-4 16:30:00

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