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FTS2051

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDevice

Features ?LowON-resistance. ?4Vdrive. ?Mountingheight1.1mm.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

GRF2051

Ultra-LowNoiseAmplifierTuningRange:0.7–3.8GHz

Features Reference:5V/70mA/1.9GHz ?Gain:19.0dB ?EvalBoardNF:0.37dB ?OP1dB:21.0dBm ?OIP3:36.0dBm ?FlexibleBiasVoltageandCurrent ?Process:GaAspHEMT Applications ?CellularInfrastructure ?SmallCellsandCellularRepeaters ?DistributedAntennaSystems ?HighPer

GUERRILLA

Guerrilla RF, Inc.

HAT2051T

SiliconNChannelPowerMOSFETHighSpeedPowerSwitching

Features ?Lowon-resistance ?Capableof2.5Vgatedrive ?Lowdrivecurrent ?Highdensitymounting

HitachiHitachi Semiconductor

日立日立公司

HAT2051T

SiliconNChannelPowerMOSFETHighSpeedPowerSwitching

Features ?Lowon-resistance ?Capableof2.5Vgatedrive ?Lowdrivecurrent ?Highdensitymounting

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ICD2051

DualProgrammableClockGenerator

CypressCypressSemiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

IRPT2051

IntegratedPowerStagefor3hpMotorDrives

SystemDescription TheIRPT2051CpowIRTRAINprovidesthecompletepowerconversionfunctionfora3hp(2.2kW)variable-frequency,variable-voltage,ACmotorcontroller.ThepowIRTRAINcombinesapowerassemblyIRPT2051AwithaDriver-PlusBoardIRPT2051D.Figure1showstheblockdiagramofthe

IRF

International Rectifier

ISGM2051

IGBTModules

FEATURES ·HighDCStability ·HighShortCircuitCapability,SelfLimitingShortCircuitCurrent ·LowSwitchingLosses ·UnbeatableRobustness ·VCEsatwithpositiveTemperatureCoefficient APPLICATIONS ·MotorDrives ·ResonantInverterAppliccations ·TractionDrives ·UPSSystems ·WindTurbines

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

KIA2051FN

BIPOLARLINEARINTEGRATEDCIRCUIT(AMPULSENOISEREDUCTION)

BIPOLARLINEARINTEGRATEDCIRCUIT AMPULSENOISEREDUCTION

KECKEC CORPORATION

KEC株式會(huì)社

LTC2051

DualZero-DriftOperationalAmplifier

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC2051

30MHz,240關(guān)APowerEfficientRail-to-RailI/OOpAmps

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC2051

Dual/QuadZero-DriftOperationalAmplifiers

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC2051

1.3MHz,20關(guān)APowerEfficientRail-to-RailI/OOpAmps

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC2051

HighVoltage,High-SideCurrentSense

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC2051

36V,LowNoise,ZeroDriftOpAmp

FEATURES Supplyvoltagerange:4.5Vto36V Offsetvoltage:±4μVmaximumat5V Offsetvoltagedrift:0.01μV/°Cmaximumat5V Inputnoise Voltage:88nVp-pfrom0.1Hzto10Hztypical Spectraldensityvoltage:4.2nV/√Hztypicalat1kHz Rail-to-railoutput Unity-gainstable GBP:5

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC2051

Zero-DriftOperationalAmplifiersinSOT-23

FEATURES APPLICATIONS nnMaximumOffsetVoltageof3μV nnMaximumOffsetVoltageDriftof30nV/°C nnNoise:1.5μVP-P(0.01Hzto10HzTyp) nnVoltageGain:140dB(Typ) nnPSRR:130dB(Typ) nnCMRR:130dB(Typ) nnSupplyCurrent:0.8mA(Typ) nnSupplyOperation nnLTC2050:2.7Vto6V nnL

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC2051

2μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifiers

FEATURES APPLICATIONS nLowSupplyCurrent:2μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n3pATypical n30pAMaximum,–40°Cto85°C n100pAMaximum,–40°Cto125°C nIntegratedEMIFilter(114dBRejectionat1.8

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC2051

10μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifier

FEATURES APPLICATIONS nLowSupplyCurrent:10μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n5pATypical n50pAMaximum,–40°Cto85°C n150pAMaximum,–40°Cto125°C nIntegratedEMIFilter(90dBRejectionat1.8

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC2051

6.5MHz,65μAPowerEfficientRail-to-RailI/OOpAmps

APPLICATIONS nMicropowerActiveFilters nPortableInstrumentation nBatteryorSolarPoweredSystems nAutomotiveElectronics nGainBandwidthProduct:6.5MHz n–3dBBandwidth(AV=+1):4.5MHz nLowQuiescentCurrent:65μA nC-Load?OpAmpDrivesallCapacitiveLoads nOffsetVoltage:

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

LTC2051CDD

Dual/QuadZero-DriftOperationalAmplifiers

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

LTC2051HV

DualZero-DriftOperationalAmplifier

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    ER2051I/P

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

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Microchip
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MICROCHIP
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7300
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MICROCHIP
23+
7300
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24+
DIP
2340
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GI
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14600
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MICROCHIP
24+
35200
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Microchip Technology
21+
NA
11200
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ER2055
6
6
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GI
22+
DIP
220
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23+
57228
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更多ER2051I/P供應(yīng)商 更新時(shí)間2025-1-12 16:30:00