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STUP582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STUP582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUS582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUS582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

*500Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

TMUX582FPWTSEP

TMUX582F-SEPRadiation-Tolerant60VProtected,Latch-UpImmune8:1MultiplexerwithAdjustableFaultThreshold

1Features ?VIDV62/23607-01XE ?Radiationhardened –Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C –ELDRSfreeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto30krad(Si) –TIDcharacterizedupto30krad(Si) –Singleeventtransient(SET)characte

TITexas Instruments

德州儀器美國德州儀器公司

TMUX582FPWTSEP

TMUX582F-SEPRadiation-Tolerant60VProtected,Latch-UpImmune8:1MultiplexerwithAdjustableFaultThreshold

1Features ?VIDV62/23607-01XE ?Radiationhardened –Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C –ELDRSfreeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto30krad(Si) –TIDcharacterizedupto30krad(Si) –Singleeventtransient(SET)characte

TI1Texas Instruments

德州儀器美國德州儀器公司

TMUX582F-SEP

TMUX582F-SEP±60-VProtected,Latch-upImmune8:1MultiplexerwithAdjustableFaultThresholdsinSpaceEnhancedPlastic

1Features ?Radiationhardened ?Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C ?ELDRSfreeto30krad(Si) ?Totalionizingdose(TID)RLATforeverywaferlot upto20krad(Si) ?TIDcharacterizedupto50krad(Si) ?Spaceenhancedplastic ?Supplyrange:8Vto22Vor±

TITexas Instruments

德州儀器美國德州儀器公司

TMUX582F-SEP

TMUX582F-SEPRadiation-Tolerant60VProtected,Latch-UpImmune8:1MultiplexerwithAdjustableFaultThreshold

1Features ?VIDV62/23607-01XE ?Radiationhardened –Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C –ELDRSfreeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto30krad(Si) –TIDcharacterizedupto30krad(Si) –Singleeventtransient(SET)characte

TITexas Instruments

德州儀器美國德州儀器公司

TMUX582F-SEP

TMUX582F-SEPRadiation-Tolerant60VProtected,Latch-UpImmune8:1MultiplexerwithAdjustableFaultThreshold

1Features ?VIDV62/23607-01XE ?Radiationhardened –Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C –ELDRSfreeto30krad(Si) –Totalionizingdose(TID)RLATforeverywafer lotupto30krad(Si) –TIDcharacterizedupto30krad(Si) –Singleeventtransient(SET)characte

TI1Texas Instruments

德州儀器美國德州儀器公司

TSB582

200mAoutputcurrentwiththermalshutdownandoutputcurrentlimiter,3.1MHz,36V,BiCMOSdualoperationalamplifier

Features ?Widesupplyvoltage:4V-36V ?Highoutputcurrent200mA ?Rail-to-railoutput,lowrailinput ?Gainbandwidthproduct:3.1MHz ?Highslewrate:2V/μs ?Internalthermalshutdown&outputcurrentlimiter ?EnhancedRFnoiseimmunity ?HightolerancetoESD:4kVHBM ?Ex

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    EVAL-ADCMP582BCPZ

  • 制造商：

    Analog Devices Inc.

  • 類別：

    開發(fā)板，套件，編程器 > 評(píng)估和演示板及套件

  • 描述：

    BOARD EVALUATION ADCMP582BCP

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ADI
21+
NA
21
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AD
1824+
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16
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Analog Devices
2022+
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6800
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
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25+
20000
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1500
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6
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23+
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3000
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24+
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56000
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23+
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10000
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更多EVAL-ADCMP582BCPZ供應(yīng)商 更新時(shí)間2025-6-14 16:38:00

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