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FG055

GAUSSIANFILTERS

FaradayFaraday Technology

智原科技智原科技股份有限公司

FSF055D

25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF055R

25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ055D

70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSJ055R

70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYC055D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom

Intersil

Intersil Corporation

FSYC055R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom

Intersil

Intersil Corporation

FVDB-055B

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

FVDB-055BHV

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

FVDT-055B

ThreePhaseDoubleStage

PREMOPREMO CORPORATION S.L

普萊默

詳細參數(shù)

  • 型號:

    F-055-C

  • 制造商:

    GC Electronics

  • 功能描述:

    Screws Sheet Metal Steel Hex Washer Head Slot Drive

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IDT/RENESAS
22+
VFQFPN
24500
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IDT,
20+
-
1128
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IDT
1931+
N/A
163
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IDT
20+
射頻元件
155
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IDT
21+
QFN68
5000
全新原裝現(xiàn)貨 價格優(yōu)勢
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IDT
23+
QFN68
50000
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IDT
22+
NA
163
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IDT
22+
QFN68
6200
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IDT
22+
9000
原廠渠道,現(xiàn)貨配單
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IDT
21+
13880
公司只售原裝,支持實單
詢價
更多F-055-C供應商 更新時間2025-2-4 11:00:00