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F6617SPK

Marking：6617；Package：CSPB2217-6；Enhancement Mode Power MOSFET

DESCRIPTION TheF6617SPKusesadvancedtrenchtechnologytoprovideexcellentR, lowgatechargeandoperationwithgatevoltagesaslowas2.5Vwhileretaininga12VVrating. ItisESDprotected. Thisdeviceissuitableforuseasaunidirectionalorbi-directionalloadswitch,facilitated

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FLS6617

Primary-Side-RegulationPWMwithPOWERMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FLS6617MX

Primary-Side-RegulationPWMwithPOWERMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HM-6617

2Kx8CMOSPROM

Description TheHM-6617isa16,384bitfuselinkCMOSPROMina2Kwordby8-bit/wordformatwith“Three-State”outputs.ThisPROMisavailableinthestandard0.600inchwide24pinSBDIP,the0.300inchwideslimlineSBDIP,andtheJEDECstandard32padCLCC. Features ?LowPowerStandbyand

Intersil

Intersil Corporation

HS-6617RH

RadiationHardened2Kx8CMOSPROM

RadiationHardened2Kx8CMOSPROM TheIntersilHS-6617RHisaradiationhardened16KCMOSPROM,organizedina2Kwordby8-bitformat.ThechipismanufacturedusingaradiationhardenedCMOSprocess,andisdesignedtobefunctionallyequivalenttotheHM-6617.Synchronouscircuitdesigntech

Intersil

Intersil Corporation

HS-6617RH

RadiationHardened2Kx8CMOSPROM

Intersil

Intersil Corporation

HS-6617RH-T

RadiationHardened2Kx8CMOSPROM

Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

Intersil

Intersil Corporation

IRF6617

HEXFETPowerMOSFET

Description TheIRF6617combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6617PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6617PBF

Lead-Free(Qualifiedupto260?CReflow)

Description TheIRF6617PbFcombinesthelatestHEXFET?powerMOSFETsilicontechnologywithadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMicro8?andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutg

IRF

International Rectifier

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IC
1950+
980
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23+
ZIP-5
5000
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STR
23+
ZIP-5
36472
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STR
23+
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45000
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ST
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16900
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IR
22+
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6000
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IR
23+
TO220
8000
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IR
23+
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7000
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23+
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8931
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1007
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更多F6617SPK供應(yīng)商 更新時(shí)間2025-1-24 14:57:00

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