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FCD5N60TM中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FCD5N60TM
廠商型號(hào)

FCD5N60TM

功能描述

600V N-Channel MOSFET

文件大小

947.92 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

Fairchild仙童半導(dǎo)體

中文名稱(chēng)

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-25 14:54:00

FCD5N60TM規(guī)格書(shū)詳情

Description

SuperFET? is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Features

? 650V @TJ = 150°C

? Typ. Rds(on)=0.81?

? Ultra low gate charge (typ. Qg=16nC)

? Low effective output capacitance (typ. Coss.eff=32pF)

? 100 avalanche tested

產(chǎn)品屬性

  • 型號(hào):

    FCD5N60TM

  • 功能描述:

    MOSFET 650V SUPERFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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