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FCI7N60中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FCI7N60
廠商型號(hào)

FCI7N60

功能描述

600V N-Channel MOSFET

文件大小

951.85 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

Fairchild仙童半導(dǎo)體

中文名稱(chēng)

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-11 19:13:00

FCI7N60規(guī)格書(shū)詳情

Description

SuperFET? MOSFET is Fairchild Semiconductor?’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Features

? 650V @TJ = 150°C

? Typ. RDS(on) = 530 mΩ

? Ultra Low Gate Charge (Typ. Qg = 23 nC)

? Low Effective Output Capacitance (Typ. Coss.eff = 60 pF)

? 100 Avalanche Tested

Application

? Lighting

? Solar Inverter

? AC-DC Power Supply

產(chǎn)品屬性

  • 型號(hào):

    FCI7N60

  • 功能描述:

    MOSFET HIGH_POWER

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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8950
BOM配單專(zhuān)家,發(fā)貨快,價(jià)格低
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