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MDF11N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDFS11N60

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MDFS11N60TH

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MDFS11N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDP11N60

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP11N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MDP11N60TH

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP11N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MGP11N60E

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP11N60E

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

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FAIRCHILD/仙童
24+
TO-220F
34
只做原廠渠道 可追溯貨源
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onsemi(安森美)
24+
TO-220F
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
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ON/安森美
SMD
23+
6000
專業(yè)配單原裝正品假一罰十
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FAIRCHILD
24+
TO-220F
8866
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FSC進(jìn)口原
17+
TO-220F
6200
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FAIRCHI
21+
TO-220F
12588
原裝正品,自己庫(kù)存 假一罰十
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FAIRCHILD/仙童
22+
TO220F
27433
原裝正品現(xiàn)貨
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三年內(nèi)
1983
只做原裝正品
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FAIRCHILD
24+
TO-220F
66800
原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源！
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FSC/ON
23+
原包裝原封 □□
547
原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢 庫(kù)存
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更多FCPF11N60T供應(yīng)商 更新時(shí)間2025-4-10 16:36:00

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