FDG6321C中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書
FDG6321C規(guī)格書詳情
General Description
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features
■ N-Ch 0.50 A, 25 V, RDS(ON) = 0.45 Ω @ VGS= 4.5V. RDS(ON) = 0.60 Ω @ VGS= 2.7 V.
■ P-Ch -0.41 A, -25 V,RDS(ON) = 1.1 Ω @ VGS= -4.5V. RDS(ON) = 1.5 Ω @ VGS= -2.7V.
■ Very small package outline SC70-6.
■ Very low level gate drive requirements allowing direct operation in 3 V circuits(VGS(th) < 1.5 V).
■ Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
產(chǎn)品屬性
- 型號：
FDG6321C
- 功能描述：
MOSFET SC70-6 COMP N-P-CH
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SOT-323-6 |
13048 |
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div> |
詢價 | ||
ON/安森美 |
24+ |
NA/ |
12000 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
FAIRCHILD |
2016+ |
SOT-363 |
3500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
FSC |
23+ |
NA |
20000 |
全新原裝假一賠十 |
詢價 | ||
FAIRCHI |
24+ |
363 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | ||||
ON |
24+ |
SOT-323-6 |
8000 |
原裝，正品 |
詢價 | ||
FAIRCHILD/仙童 |
25+ |
SOT363 |
54648 |
百分百原裝現(xiàn)貨 實單必成 歡迎詢價 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
SOT-363 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
FAICHILD |
24+ |
SC70-6 |
20000 |
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅！！ |
詢價 |
