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FDMA430NZ

Single N-Channel 2.5V Specified PowerTrench MOSFET

GeneralDescription ThisSingleN-ChannelMOSFEThasbeendesignedusingFairchildSemiconductor’sadvancedPowerTrenchprocesstooptimizetheRDS(on)@VGS=2.5VonspecialMicroFETleadframe. Features ■RDS(on)=40m?@VGS=4.5V,ID=5.0A ■RDS(on)=50m?@VGS=2.5V,ID=4.5A ■Low

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDMA430NZ

Single N-Channel 2.5V Specified PowerTrench? MOSFET 30V, 5.0A, 40m?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDMA430NZ

Single N-Channel 2.5V Specified PowerTrench? MOSFET30V, 5.0A, 40m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDMA430NZ_0609

Single N-Channel 2.5V Specified PowerTrench? MOSFET 30V, 5.0A, 40m?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDMA430NZ_08

Single N-Channel 2.5V Specified PowerTrench? MOSFET30V, 5.0A, 40m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDME430NT

N-ChannelPowerTrench?MOSFET30V,6A,40m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FM430

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

RECTRON

Rectron Semiconductor

FM430M

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

RECTRON

Rectron Semiconductor

FMM430

LOWVfSCHOTTKYBATTIERRECTIFIER

RECTRON

Rectron Semiconductor

FPN430

PNPLowSaturationTransistor

PNPLowSaturationTransistor Thesedevicesaredesignedforhighcurrentgainandlow saturationvoltagewithcollectorcurrentsupto2.0Acontinuous. SourcedfromProcessPB.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FPN430A

PNPLowSaturationTransistor

PNPLowSaturationTransistor Thesedevicesaredesignedforhighcurrentgainandlow saturationvoltagewithcollectorcurrentsupto2.0Acontinuous. SourcedfromProcessPB.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FRL430D

2A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRL430H

2A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRL430R

2A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRM430

SecondGenerationRadHardMOSFETResults

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FRM430D

3A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25M?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRM430H

3A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25M?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRM430R

3A,500V,2.50Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25M?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRS430D

3A,500V,2.52Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

FRS430H

3A,500V,2.52Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    FDMA430NZ

  • 功能描述：

    MOSFET 2.5V SINGLE NCH SPECIFIED POWER

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD/仙童
24+
DFN
154731
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
ON/安森美
23+
WDFN-6
3524
原裝正品,現(xiàn)貨庫(kù)存,1小時(shí)內(nèi)發(fā)貨
 詢價(jià)
onsemi
24+
6-MicroFET(2x2)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
ON
21+
SOT23
12000
詢價(jià)
ON
21+
DFN
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
ON/安森美
22+
BGA
21000
原裝正品
 詢價(jià)
ON/安森美
20+
DFN2020-6
120000
原裝正品 可含稅交易
 詢價(jià)
ON/安森美
23+
WDFN-6
14316
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
 詢價(jià)
ONSEMI
24+
N/A
10000
只做原裝,實(shí)單最低價(jià)支持
 詢價(jià)
ON/安森美
24+
DFN2*2
504583
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
更多FDMA430NZ供應(yīng)商 更新時(shí)間2025-1-12 15:40:00

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