零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FDMS86101 | 類型:N溝道 漏源電壓(Vdss):100V 連續(xù)漏極電流(Id):12.4A 功率(Pd):2.5W 導(dǎo)通電阻(RDS(on)@Vgs,Id):8mΩ@10V,13A N 溝道,PowerTrench MOSFET,100V,60A,8mΩ 此 N 溝道 MOSFET 是使用先進(jìn)的 PowerTrench 工藝生產(chǎn)的,特別適用于最大程度降低導(dǎo)通電阻,同時保持卓越的 | ONSEMI | ||
FDMS86101 | N-Channel PowerTrench? MOSFET 100 V, 49 A, 8 m? | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
FDMS86101 | N-Channel PowerTrench? MOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
N-Channel Dual CoolTM Power Trench? MOSFET 100 V, 60 A, 7.5 m廓 DualCool?packagingtechnology,providesbothbottom-andtop-sidecoolinginaPQFNpackage.NotonlyisthePQFNfootprintanindustrystandard,itprovidesthedesignerwithperformance?exibility.Withenhanceddualpaththermalperformanceandimprovedparasiticsoveritswire-bondedpredece | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
DUAL COOL??PACKAGE POWERTRENCH? MOSFETs DualCool?packagingtechnology,providesbothbottom-andtop-sidecoolinginaPQFNpackage.NotonlyisthePQFNfootprintanindustrystandard,itprovidesthedesignerwithperformance?exibility.Withenhanceddualpaththermalperformanceandimprovedparasiticsoveritswire-bondedpredece | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·DrainSourceVoltage-:VDSS=100V(Min) ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·PrimaryDC-DCMOSFET ·SecondarySynchronousRectifier ·LoadSwitch | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel PowerTrench? MOSFET 100 V, 60 A, 8 m廓 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel PowerTrench? MOSFET 100 V, 60 A, 8 m廓 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata | ||
HIGHFREQUENCYCERAMICCAPACITORS | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | MuRata |
詳細(xì)參數(shù)
- 型號:
FDMS86101
- 功能描述:
MOSFET 100/20V Nch Power Trench
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON |
22+ |
Power 56 |
30000 |
原裝正品可支持驗(yàn)貨,歡迎咨詢 |
詢價 | ||
ON/安森美 |
21+ |
PQFN8 |
600000 |
航宇科工半導(dǎo)體-中國航天科工集團(tuán)戰(zhàn)略合作伙伴! |
詢價 | ||
onsemi |
24+ |
8-PQFN(5x6) |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
FSC |
15+ |
原廠原裝 |
66000 |
進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價 | ||
ON |
2020+ |
PQFN8L |
40000 |
原裝正品,誠信經(jīng)營。 |
詢價 | ||
FSC |
2020+ |
QFN |
8000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
ON |
21+ |
SOT23 |
3000 |
詢價 | |||
ON |
21+20 |
PQFN-8L |
6000 |
全新原裝公司現(xiàn)貨
|
詢價 | ||
FAIRCHILD/仙童 |
1538+ |
QFN |
2077 |
原裝正品 可含稅交易 |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
QFN |
3000 |
只做原廠渠道 可追溯貨源 |
詢價 |
相關(guān)規(guī)格書
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