FDN306中文資料翊歐數(shù)據(jù)手冊PDF規(guī)格書

General Description

This P-Channel 1.8V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

Applications

? Battery management

? Load switch

? Battery protection

Features

? –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V

RDS(ON) = 50 mΩ @ VGS = –2.5 V

RDS(ON) = 80 mΩ @ VGS = –1.8 V

? Fast switching speed

? High performance trench technology for extremely

low RDS(ON)

? SuperSOTTM -3 provides low RDS(ON) and 30 higher

power handling capability than SOT23 in the same

footprint