首頁 >FDPF5N50NZ>規(guī)格書列表
零件型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
FDPF5N50NZ | DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | ||
FDPF5N50NZ | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=4.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ||
FDPF5N50NZ | 功率 MOSFET,N 溝道,UniFETTM II,500 V,4.5 A,1.5 Ω,TO-220F UniFETTM II MOSFET 是飛兆半導(dǎo)體?的高壓 MOSFET 系列產(chǎn)品,基于先進(jìn)平面條形和 DMOS 技術(shù)。 該先進(jìn) MOSFET 系列在平面 MOSFET 產(chǎn)品中具有最小的通態(tài)電阻,還可提供卓越的開關(guān)性能和更高的雪崩能量強(qiáng)度。 此外,內(nèi)部的柵源 ESD 二極管使 UniFET II MOSFET 產(chǎn)品可承受超過 2kV 的 HBM 沖擊應(yīng)力。 該器件系列適用于開關(guān)電源轉(zhuǎn)換器應(yīng)用,如功率因數(shù)校正(PFC)、平板顯示器(FPD)電視電源、ATX 及燈用電子鎮(zhèn)流器。; ?RDS(on) = 1.38? (典型值)@ VGS = 10V, ID = 2.25A\n?低柵極電荷(典型值 9nC) \n?低 Crss(典型值 4pF) \n?100% 經(jīng)過雪崩擊穿測試\n?提高了 dv/dt 處理能力\n?改進(jìn)了 ESD 防護(hù)能力\n?符合 RoHS 標(biāo)準(zhǔn)\n; | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=4.2A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | |||
N 溝道 UniFETTM II FRFET? MOSFET 500V,4.2A,1.75Ω UniFETTM II MOSFET 是飛兆半導(dǎo)體?的高壓 MOSFET 系列產(chǎn)品,基于先進(jìn)平面條形和 DMOS 技術(shù)。 該先進(jìn) MOSFET 系列在平面 MOSFET 產(chǎn)品中具有最小的通態(tài)電阻,還可提供卓越的開關(guān)性能和更高的雪崩能量強(qiáng)度。 此外,內(nèi)部的柵源 ESD 二極管使 UniFET II MOSFET 產(chǎn)品可承受超過 2kV 的 HBM 沖擊應(yīng)力。 UniFET II FRFET? MOSFET體二極管的反向恢復(fù)性能通過壽命控制方式得到加強(qiáng)。 其 trr 小于 100nsec 且反向 dv/dt 抗擾度為 15V/nsec,而一般的平面 MOSFET 產(chǎn)品分別為 200nsec 以上和; ?RDS(on) = 1.57? (典型值)@ VGS = 10V, ID = 2.1A\n?低柵極電荷(典型值 9nC) \n?低 Crss(典型值 4pF) \n?100% 經(jīng)過雪崩擊穿測試\n?提高了 dv/dt 處理能力\n?改進(jìn)了 ESD 防護(hù)能力\n?符合 RoHS 標(biāo)準(zhǔn)\n; | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | |||
DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | |||
N-Channel UniFETTM II Ultra FRFETTM MOSFET? Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravalanc | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=3.9A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 |
技術(shù)參數(shù)
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
500
- VGS Max (V):
±30
- VGS(th) Max (V):
5
- ID Max (A):
4.5
- PD Max (W):
30
- RDS(on) Max @ VGS = 10 V(mΩ):
1500
- Qg Typ @ VGS = 10 V (nC):
9
- Ciss Typ (pF):
330
- Package Type:
TO-220-3 FullPak
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
TO-220F |
45000 |
FAIRCHILD/仙童全新現(xiàn)貨FDPF5N50NZ即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價(jià) | ||
FAIRCHILD/仙童 |
2021+ |
TO-220F |
9000 |
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià) |
詢價(jià) | ||
ON/安森美 |
2410+ |
TO-220F |
12000 |
原裝正品.假一賠百.正規(guī)渠道.原廠追溯. |
詢價(jià) | ||
ONSemiconductor |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢供應(yīng) |
詢價(jià) | ||
FAIRCHI |
23+ |
TO220F |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
FAIRCHILD |
25+23+ |
TO220F |
7770 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
FAIRCHILD/仙童 |
22+ |
TO220F |
21046 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
FSC/ON |
23+ |
原包裝原封 □□ |
6000 |
原裝進(jìn)口特價(jià)供應(yīng) 特價(jià),原裝元器件供應(yīng),支持開發(fā)樣品 更多詳細(xì)咨詢 庫存 |
詢價(jià) | ||
FAIRCHILD/仙童 |
2022+ |
20 |
全新原裝 貨期兩周 |
詢價(jià) |
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