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FIR60N20PG

Marking:FIR60N20P;Package:TO-220AB;N-Channel Enhancement Mode Power Mosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

HM60N20

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM60N20D

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

IXFC60N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFC60N20

HiPerFETMOSFETISOPLUS220TM

HiPerFET?MOSFETISOPLUS220? ElectricallyIsolatedBackSurface N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOS?Family Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintot

IXYS

IXYS Corporation

IXFH60N20

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInductiveloadswitching(UIS) ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Easytomount ?Spacesav

IXYS

IXYS Corporation

IXFH60N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH60N20F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH60N20F

HiPerRFTMPowerMOSFETs

HiPerRFTMPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFT60N20

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInductiveloadswitching(UIS) ?MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages ?Easytomount ?Spacesav

IXYS

IXYS Corporation

供應商型號品牌批號封裝庫存備注價格
FIRST EUROPE
22+
SMD
518000
明嘉萊只做原裝正品現(xiàn)貨
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FIRST EUROPE
22+
N/A
152440
原裝原裝原裝
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torex
2023+
SOT-23
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
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FIRST/福斯特
23+
TO-252
10000
公司只做原裝正品
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First
TO-252
22+
6000
十年配單,只做原裝
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FIRST/福斯特
22+
TO-252
25000
只做原裝進口現(xiàn)貨,專注配單
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FIRST/福斯特
22+
TO-252
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
First
24+
TO-252
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
FIRST/福斯特
2048+
TO220F/251/252
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
FIRST/福斯特
23+
TO251
10000
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更多FIR60N20PG供應商 更新時間2025-1-27 17:02:00