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FMC11N60E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.79Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FMC11N60E

N-CHANNEL SILICON POWER MOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMI11N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMP11N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV11N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FMV11N60E

N-CHANNELSILICONPOWERMOSFET

SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedura

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

GC11N60F

PowerFactorCorrection

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60F

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60F

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60K

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    FMC11N60E

  • 制造商：

    FUJI

  • 制造商全稱：

    Fuji Electric

  • 功能描述：

    N-CHANNEL SILICON POWER MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FUJITSU/富士通
24+
TO-263
500063
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
NEXPERIA/安世
23+
SOT23
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
FUJI/富士電機(jī)
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
FUJI
原廠封裝
1000
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
FUJI/富士電機(jī)
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),絕對(duì)原裝 假一罰十
 詢價(jià)
FUJI/富士電機(jī)
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
FUJI/富士電機(jī)
23+
N/A
11550
FUJI/富士電機(jī)系列在售
 詢價(jià)
FUJI/富士電機(jī)
23+
N/A
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢價(jià)
FUJITSU/富士通
24+
355
現(xiàn)貨供應(yīng)
 詢價(jià)
FUJITSU/富士通
23+
TO-59
8510
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
 詢價(jià)
更多FMC11N60E供應(yīng)商 更新時(shí)間2025-3-29 10:12:00

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