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FQB12N50

OptimizedSwitchforDiscontinuousCurrentModePowerFactorCorrection

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB12N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI12N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFBL12N50A

HEXFET?PowerMOSFET

IRF

International Rectifier

IXFA12N50P

PolarPowerMOSFETHiperFET

Polar?PowerMOSFETHiperFET? N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFA12N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH12N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH12N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching

IXYS

IXYS Corporation

IXFH12N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFM12N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    FMV12N50ESSC-P

  • 制造商：

    Fuji Electric

供應商型號品牌批號封裝庫存備注價格
TOSHIBA/東芝
23+
TO-220F
10000
公司只做原裝正品
 詢價
TOSHIBA/東芝
TO-220F
22+
6000
十年配單,只做原裝
 詢價
TOSHIBA/東芝
22+
TO-220F
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
TOSHIBA
24+
TO-TO-220F
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
FUJITSU/富士通
23+
TO220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FUJITSU/富士通
24+
TO220F
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
 詢價
FUJITSU/富士通
22+
TO-220F
50000
只做原裝假一罰十,歡迎咨詢
 詢價
FUJI
21+
TO220F
6000
原裝現(xiàn)貨假一賠十
 詢價
FUJI
23+
TO220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FUJI富士
TO220F
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
更多FMV12N50ESSC-P供應商 更新時間2025-1-25 14:30:00

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