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FMV23N50E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV23N50ES

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

IRFP23N50L

PowerMOSFET

FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimplerdrive requirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategoriza

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50L

PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A)

FeaturesandBenefits ?SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity Application

IRF

International Rectifier

IRFP23N50L

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvailab

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50L

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.235?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP23N50LPBF

HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.190廓,Trrtyp.=170ns,ID=23A)

FeaturesandBenefits ?SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity ?Lead-Free

IRF

International Rectifier

IRFP23N50LPBF

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvailab

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    FMV23N50E

  • 制造商：

    Fuji Electric

  • 功能描述：

    IC,MOSFET, N-Channel,FAP-E3 Planar, 500V, 23A, 130W, TO-220F(SLS)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FUJI
17+
TO220
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
FujiSemiconductor
新
503
全新原裝 貨期兩周
 詢價(jià)
FUJI
1822+
TO220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
Fuji Semiconductor
2022+
499
全新原裝 貨期兩周
 詢價(jià)
FUJI/富士電機(jī)
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
FUJI/富士電機(jī)
22+
TO220
2985
只做原裝自家現(xiàn)貨供應(yīng)!
 詢價(jià)
FUJI/富士電機(jī)
2022
TO-220F
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
FUJI/富士電機(jī)
2022+
TO-220F
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
-
23+
NA
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
FUJI
13+
TO-220F
388
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
更多FMV23N50E供應(yīng)商 更新時(shí)間2025-1-25 16:00:00

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