首頁(yè)>FQB6N60C>規(guī)格書(shū)詳情

FQB6N60C中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FQB6N60C
廠(chǎng)商型號(hào)

FQB6N60C

功能描述

600V N-Channel MOSFET

文件大小

680.4 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠(chǎng)商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

FAIRCHILD仙童半導(dǎo)體

中文名稱(chēng)

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠(chǎng)下載

更新時(shí)間

2025-5-31 11:12:00

人工找貨

FQB6N60C價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

FQB6N60C規(guī)格書(shū)詳情

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

? 5.5A, 600V, RDS(on) = 2.0? @VGS = 10 V

? Low gate charge ( typical 16 nC)

? Low Crss ( typical 7 pF)

? Fast switching

? 100 avalanche tested

? Improved dv/dt capability

產(chǎn)品屬性

  • 型號(hào):

    FQB6N60C

  • 制造商:

    FAIRCHILD

  • 制造商全稱(chēng):

    Fairchild Semiconductor

  • 功能描述:

    600V N-Channel MOSFET

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
FAIRCHI
24+
SOT263
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢(xún)價(jià)
FAIRCHILD/仙童
22+
SOT263
20000
保證原裝正品,假一陪十
詢(xún)價(jià)
FAIRC
23+
TO-263(D2PAK)
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
JD/晶導(dǎo)
23+
SOD123
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢(xún)價(jià)
FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
原裝正品代理渠道價(jià)格優(yōu)勢(shì)
詢(xún)價(jià)
FAIRCHILD
24+
TO-263
8866
詢(xún)價(jià)
FAIRCHILD
20+
SOT263
4940
進(jìn)口原裝現(xiàn)貨,假一賠十
詢(xún)價(jià)
FAIRC
2023+
TO-263(D2PAK
50000
原裝現(xiàn)貨
詢(xún)價(jià)
仙童
06+
TO-263
3800
原裝
詢(xún)價(jià)
Fairchild
23+
33500
詢(xún)價(jià)