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FQP6N50中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

FQP6N50
廠商型號(hào)

FQP6N50

功能描述

500V n-Channel MOSFET

文件大小

745.4 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-25 14:30:00

FQP6N50規(guī)格書詳情

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge.

Features

? 5.5 A, 500 V, RDS(on) = 1.3 ? @ VGS = 10 V

? Low gate charge ( typical 17 nC )

? Low Crss ( typical 11 pF)

? Fast switching

? 100 avalanche tested

? Improved dv/dt capability

產(chǎn)品屬性

  • 型號(hào):

    FQP6N50

  • 功能描述:

    MOSFET 500V N-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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