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首頁 >FQT4N20>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FQT4N20	文件：629.01 Kbytes Page：8 Pages	200V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQT4N20L	文件：627.52 Kbytes Page：8 Pages	200V LOGIC N-Channel MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQT4N20LTF	文件：2.04983 Mbytes Page：8 Pages	N-Channel QFET? MOSFET 200 V, 0.85 A, 1.40 廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQT4N20LTF-TP	文件：3.04984 Mbytes Page：5 Pages	N-Channel Enhancement Mode Power MOSFET GENERALFEATURES Vos=200V 'b=1.0A@Ves=10V \|Roson)￡1.35Q@Ves=10V \|SOT-223package.	TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司	TECHPUBLIC
FQU4N20	文件：701.83 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features ?3.0A,200V,RDS(on)=1.4?(Max.)@VGS=10V ?Lowgatecharge(Typ.5.0nC) ?LowCrss(Typ.5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU4N20	文件：329.68 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQU4N20L	文件：330.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.2A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQU4N20L	文件：519.64 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU4N20L	文件：526.71 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
KF4N20LD	文件：601.68 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會(huì)社	KEC
KF4N20LD	文件：601.66 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會(huì)社	KEC
KF4N20LD/I	文件：601.66 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會(huì)社	KEC
KF4N20LDI	文件：601.66 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會(huì)社	KEC
KF4N20LI	文件：601.66 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會(huì)社	KEC
KF4N20LI	文件：601.68 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D	KECKEC CORPORATION KEC株式會(huì)社	KEC
KF4N20LW	文件：316.81 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=1A ?Dra	KECKEC CORPORATION KEC株式會(huì)社	KEC
KSMD4N20	文件：1.33594 Mbytes Page：8 Pages	200VN-CHANNELMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
KSMU4N20	文件：1.33594 Mbytes Page：8 Pages	200VN-CHANNELMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
MDD4N20Y	文件：810.9 Kbytes Page：6 Pages	N-ChannelMOSFET200V,3.0A,1.35(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDD4N20YRH	文件：351.95 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC

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詳細(xì)參數(shù)

型號(hào)：
FQT4N20
制造商：
FAIRCHILD
制造商全稱：
Fairchild Semiconductor
功能描述：
200V N-Channel MOSFET

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	FQT4N20	FAIRCHILD	24+	TO-223	68000		詢價(jià)
深圳市勤思達(dá)科技有限公司	FQT4N20	FAIRC	12+	SOT-223	15000	全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)
深圳市鵬和科技有限公司	FQT4N20	FSC	24+	SOT223	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
深圳市永貝爾科技有限公司	FQT4N20	FAIRCHILD	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
瀚佳科技(深圳)有限公司	FQT4N20	FAIRC	24+	SOT-223	16800	絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?	詢價(jià)
艾睿國際（香港）有限公司	FQT4N20	FAIRCHILD/仙童	2021+	SOT-223	100500	一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價(jià)
深圳市河鋒鑫科技有限公司	FQT4N20	FAIRCHILD/仙童	2022+	SOT-223	7500	原廠代理終端免費(fèi)提供樣品	詢價(jià)
深圳市恒達(dá)億科技有限公司	FQT4N20	FAIRCHILD	23+	SOT-223	4500	全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售	詢價(jià)
深圳市匯萊威科技有限公司	fqt4n20		FSC	SOT223	68900	原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	FQT4N20	FAIRCHILD/仙童	23+	SOT-223	28000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種	詢價(jià)

更多FQT4N20供應(yīng)商更新時(shí)間2025-1-13 10:50:00

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