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IXGA7N60C

HiPerFASTIGBTLightspeedSeries

Features ?Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Uninterruptiblepowersupplies(UPS) ?Switc

IXYS

IXYS Corporation

IXGP7N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB ?MediumfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Uninterruptiblepowersupplies(UPS) ?

IXYS

IXYS Corporation

IXGP7N60C

HiPerFASTIGBTLightspeedSeries

Features ?Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Uninterruptiblepowersupplies(UPS) ?Switc

IXYS

IXYS Corporation

IXTA7N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA7N60P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTA7N60PM

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Plasticovermoldedtabforelectrical isolation ?Internationalstandardpackage ?Avanlancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings Appli

IXYS

IXYS Corporation

IXTP7N60P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTP7N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP7N60PM

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage- :VDSS=600V(Min) ?Staticdrain-sourceon-resistance :RDS(on)≤1.1?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Idealforhigh-frequenc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP7N60PM

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Plasticovermoldedtabforelectrical isolation ?Internationalstandardpackage ?Avanlancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings Appli

IXYS

IXYS Corporation

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