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FSL234D

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSL234R

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSPYE234F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYE234R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSS234

DC/DCConverterApplications

Features ?LowON-resistance. ?4.0Vdrive. ?Ultrahigh-speedswitching.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

FSS234D

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS234R

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FT234XD

SinglechipUSBtoasynchronousserialdatatransferinterface

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FT234XD

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

FT234XDR

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    FRX234R

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.5A I(D) | LLCC

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DBLECTRO
23+
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29960
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FUZETEC(臺(tái)灣富致)
2112+
Through Hole
115000
100個(gè)/袋一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
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FUZETEC(富致)
23+
插件
6000
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24+
N/A
64000
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FUZETEC
06+36
100
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FUZTE/富致
24+
DIP
860000
明嘉萊只做原裝正品現(xiàn)貨
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FUZTE/富致
2018+
DIP
88000
原裝現(xiàn)貨
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FUZETEC/富致
23+
DIP
6850
只做原廠原裝正品現(xiàn)貨!假一賠十!
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富致/FUZETEC
23+
DIP
130000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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FUZETEC(臺(tái)灣富致)
21+
徑向引線
4000
中國(guó)航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領(lǐng)導(dǎo)者
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更多FRX234R供應(yīng)商 更新時(shí)間2025-2-9 15:00:00