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首頁(yè) >FSL230>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FSL230	文件：45.65 Kbytes Page：8 Pages	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL230D	文件：45.65 Kbytes Page：8 Pages	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL230D1	文件：45.65 Kbytes Page：8 Pages	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL230D3	文件：45.65 Kbytes Page：8 Pages	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL230R	文件：45.65 Kbytes Page：8 Pages	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL230R1	文件：45.65 Kbytes Page：8 Pages	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL230R3	文件：45.65 Kbytes Page：8 Pages	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSL230R4	文件：45.65 Kbytes Page：8 Pages	5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil
FSLF230-SUS	文件：741.79 Kbytes Page：2 Pages	On/Off,SpringReturn,350?F[177?C]forhalfanhour,15sCycleTime	BELIMO BELIMO AIRCONTROLS (USA), INC	BELIMO
FSLF230US	文件：597.3 Kbytes Page：2 Pages	On/Off,SpringReturn,350?F[177?C]forhalfanhour,15sCycleTime	BELIMO BELIMO AIRCONTROLS (USA), INC	BELIMO
FSNF230-SUS	文件：613.06 Kbytes Page：2 Pages	On/Off,SpringReturn,350?F[177?C]forhalfanhour,AC230V,15sCycleTime	BELIMO BELIMO AIRCONTROLS (USA), INC	BELIMO
FSNF230US	文件：483.82 Kbytes Page：2 Pages	On/Off,SpringReturn,350?F[177?C]forhalfanhour,AC230V,15sCycleTime	BELIMO BELIMO AIRCONTROLS (USA), INC	BELIMO
FSPL230F	文件：81.57 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSPL230R	文件：81.57 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSPS230F	文件：80.35 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPower?RadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Sta	Intersil Intersil Corporation	Intersil
FSPS230R	文件：80.35 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPower?RadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Sta	Intersil Intersil Corporation	Intersil
FSPYE230	文件：83.75 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSPYE230F	文件：83.75 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSPYE230R	文件：83.75 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStarPowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.StarPowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star	Intersil Intersil Corporation	Intersil
FSS230D	文件：46.46 Kbytes Page：8 Pages	8A,200V,0.440Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	Intersil Intersil Corporation	Intersil

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詳細(xì)參數(shù)

型號(hào)：
FSL230
制造商：
INTERSIL
制造商全稱：
Intersil Corporation
功能描述：
5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市博浩通科技有限公司	FSL230D3	HARRIS	23+	CAN-3	8890	價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢	詢價(jià)
深圳市賽美科科技有限公司	FSL230D3	HARRIS		CAN-3	68500	一級(jí)代理原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨	詢價(jià)
深圳市宏捷佳電子科技有限公司	FSL23S	Good-Ark Semiconductor	24+	SOD-123F	9350	獨(dú)立分銷商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
上海金慶電子技術(shù)有限公司	FSL244BL	HUBBELL	新		11	全新原裝貨期兩周	詢價(jià)
深圳市華斯頓科技有限公司	FSL2520-1R0M=P2	TOKO	22+23+	SMD	40893	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
瀚佳科技(深圳)有限公司	FSL2520-1R0M=P2	TOKO	24+	SMD	36200	全新原裝現(xiàn)貨/放心購(gòu)買	詢價(jià)
艾睿國(guó)際（香港）有限公司	FSL2520-1R0M=P2	TOKO	2021+	SMD	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
深圳市宇創(chuàng)芯科技有限公司	FSL2520-1R0M=P2	TOKO	22+	QFP	9600	原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	FSL2520-1R0MP2	TOKO	23+	SMD	7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	FSL2520-1R0MP2	TOKO	23+	SMD	7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)

更多FSL230供應(yīng)商更新時(shí)間2025-1-7 17:45:00

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