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FSYE430D3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopeda seriesofRadiationHardenedMOSFETsspecifically designedforcommercialandmilitaryspaceapplications. EnhancedPowerMOSFETimmunitytoSingleEventEffects (SEE),SingleEventGateRupture(SEGR)inparticular,is combinedwith

Intersil

Intersil Corporation

Intersil

FSL430D3

2A,500V,2.50Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

Intersil

FSS430D3

3A,500V,2.70Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

Intersil

FT1000AX-50

MITSUBISHI
模塊

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

上傳：深圳市毅創(chuàng)騰電子科技有限公司

Mitsubishi

FT120T-R

FTDI(飛特帝亞)
TSSOP-28

FTDI(飛特帝亞)

詳細參數(shù)

  • 型號：

    FSYE430D3

  • 制造商：

    INTERSIL

  • 制造商全稱：

    Intersil Corporation

  • 功能描述：

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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