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FSYE923A0R1

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin

Intersil

Intersil Corporation

Intersil

FSL923A0R1

5A,-200V,0.670Ohm,RadiationHardened,SEGRResistant,P-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

Intersil

FSS923A0R1

7A,-200V,0.650Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

Intersil

FT1000AX-50

MITSUBISHI
模塊

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

上傳：深圳市毅創(chuàng)騰電子科技有限公司

Mitsubishi

FT120T-R

FTDI(飛特帝亞)
TSSOP-28

FTDI(飛特帝亞)

詳細(xì)參數(shù)

  • 型號：

    FSYE923A0R1

  • 制造商：

    INTERSIL

  • 制造商全稱：

    Intersil Corporation

  • 功能描述：

    Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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