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FTD2114K

Epitaxial planar type NPN silicon transistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

FTD2114KVLT1G

Marking：BV；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

FTD2114KVLT3G

Marking：BV；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

FTD2114KWLT1G

Marking：BW；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

FTD2114KWLT3G

Marking：BW；Package：SOT-23；Epitaxial planar type NPN silicon transistor

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) 4)WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

GM2114

CMOSPOSITIVEVOLTAGEREGULATOR

Description TheGM2114seriesofpositive,linearregulatorsfeaturelowquiescentcurrent(30uAtyp.)withlowdropoutvoltage,makingthemidealforbatteryapplications. TheseruggeddeviceshavebothThermalShutdown,andCurrentFold-backtopreventdevicefailureunderthe“Worst”ofopera

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GRF2114

BroadbandLNA/LinearDriverTuningRange:0.1–2.7GHz

Features Reference:5V/135mA/830MHz ?Gain:17.9dB ?EvalBoardNF:0.93dB ?IP1dB:7.4dBm ?OP1dB:24.3dBm ?IIP3:22.3dBm ?OIP3:40.2dBm ?FlexibleBiasVoltageandCurrent ?Process:GaAspHEMT Applications ?SmallCellsandCellularRepeaters ?CellularInfrastructure ?

GUERRILLA

Guerrilla RF, Inc.

HAT2114R

SiliconNChannelPowerMOSFETHighSpeedPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAT2114RJ

SiliconNChannelPowerMOSFETHighSpeedPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HDSP2114S

8-Character5x7DotMatrixParallelInputAlphanumericIntelligentDisplay

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

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IPS
1728+
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8500
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IPS
23+
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50000
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I
TO-252
22+
6000
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IPS
1932+
TO-252
1610
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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IPS
23+
NA/
729
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IPS
2022+
TO-252
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
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IPS
23+24
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56983
原裝正品,原盤原標(biāo),提供BOM一站式配單
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IPS
25+
TO-252
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
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IPS
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
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IPS
2018+
TO252
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
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更多FTD2114K供應(yīng)商 更新時(shí)間2025-3-17 15:10:00

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