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GLCR2012

SMDInductors(Coils)ForPowerLine(Wound,MagneticShielded)

TDKTDK Corporation

TDK株式會(huì)社東電化(中國(guó))投資有限公司

GLFR2012

SMDInductors(Coils)ForPowerLine(Wound,MagneticShielded)

TDKTDK Corporation

TDK株式會(huì)社東電化(中國(guó))投資有限公司

GRF2012

BroadbandLinearGainBlock0.05to6.0GHz

GUERRILLA

Guerrilla RF, Inc.

GRF2012W

BROADBANDLINEARGAINBLOCK0.05to6GHz

FEATURES FlexibleBias InternallyMatchedto50Ω Process:GaAspHEMT Compact1.5x1.5mmDFN-6Package Reference:5V/90mA/0.9GHz Gain:14.8dB OIP3:40dBm OP1dB:23dBm EVBNoiseFigure:2.7dB Reference:8V/100mA/0.9GHz Gain:14.9dB OIP3:40dBm OP1dB:25dBm EVBN

GUERRILLA

Guerrilla RF, Inc.

GRF2012-W

BroadbandLinearGainBlock

GUERRILLA

Guerrilla RF, Inc.

GWX-2012

Competitivepricingforvolumeapplications

GOLLEDGE

Golledge Electronics Ltd

HAF2012

SiliconNChannelMOSFETSeriesPowerSwitching

ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2012L

SiliconNChannelMOSFETSeriesPowerSwitching

ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2012S

SiliconNChannelMOSFETSeriesPowerSwitching

ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCB2012

HighCurrentFerriteChipBead(LeadFree)

TAI-TECHTAI-TECH Advanced Electronics Co., Ltd.

西北臺(tái)慶科技西北臺(tái)慶科技股份有限公司

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23+
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163613
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FS
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9600
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更多FTK2012供應(yīng)商 更新時(shí)間2025-6-25 14:01:00