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FZT949QTA

30V PNP MEDIUM POWER TRANSISTOR

Features ?BVCEO>-30V ?IC=-5.5AHighContinuousCollectorCurrent ?IC=-20APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FZT949QTA

30V PNP MEDIUM POWER TRANSISTOR IN SOT223

Features ?BVCEO>-30V ?IC=-5.5AHighContinuousCollectorCurrent ?IC=-20APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FZT949QTA

Package：TO-261-4，TO-261AA；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：PWR LOW SAT TRANSISTOR SOT223 T\u0026

PAM

Diodes Incorporated

FZT949TA

SOT223PNPSILICONPLANARHIGHCURRENT(HIGHPERFORMANCE)TRANSISTORS

Features ?BVCEO>-30V ?IC=-5.5AHighContinuousCollectorCurrent ?IC=-20APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FZT949TA

30VPNPMEDIUMPOWERTRANSISTORINSOT223

Features ?BVCEO>-30V ?IC=-5.5AHighContinuousCollectorCurrent ?IC=-20APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FZT949TA

30VPNPMEDIUMPOWERTRANSISTOR

Features ?BVCEO>-30V ?IC=-5.5AHighContinuousCollectorCurrent ?IC=-20APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

GL949

PNPSILICONPLANARHIGHCURRENTTRANSISTOR

Description TheGL949isdesignedforgeneralpurposeswitchingandamplifierapplications. Features ●6Ampscontinuouscurrent,upto20Ampspulsecurrent ●Verylowsaturationvoltages

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GL949

PNPSILICONPLANARHIGHCURRENTTRANSISTOR

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

HMC949

ActiveBiasControllerHighCurrent

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

HMC949

GaAspHEMTMMIC2WATTPOWERAMPLIFIERWITHPOWERDETECTOR,12-16GHz

Hittite

Hittite Microwave Corporation

HMC949

GaAspHEMTMMIC2WATTPOWERAMPLIFIERWITHPOWERDETECTOR,12-16GHz

Hittite

Hittite Microwave Corporation

MC949

INTEGRATEDCIRCUITS

INTEGRATEDCIRCUITSFROMMOTOROLA MDTLintegratedcircuitsprovideanexcellentbalanceofspeedpowerdissipation,andnoiseimmunityforgeneralpurposedigitalapplications.Thelineincludesmanymultifunctiontypes.AdditionallogicpowerisprovidedbythewiredORcapabilityofthebasicM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MPC949

LOWVOLTAGE1:15PECLTOCMOSCLOCKDRIVER

LowVoltage1:15PECLtoCMOSClockDriver TheMPC949isalowvoltageCMOS,15outputclockbuffer.The15outputscanbeconfiguredintoastandardfanoutbufferorinto1Xand1/2Xcombinations.ThedevicefeaturesalowvoltagePECLinput,inadditiontoitsLVCMOS/LVTTLinputs,toallowitt

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

NTE949

IntegratedCircuitDualAudioOperationalAmplifier/Preamplifier

Description: TheNTE949consistsoftwoidenticalhighgainOPAmpsconstructedonasingle8–LeadMetalCantypepackage.Thesethree–stageamplifiersuseClassAPNPtransistoroutputstageswithuncommittedcollectors.Thisenablesavarietyofloadstobeemployedforgeneralpurposeapplic

NTE

NTE Electronics

OBTS949

SmartLowsidePowerSwitch

SIEMENSSiemens Semiconductor Group

西門(mén)子德國(guó)西門(mén)子股份公司

P949

SB?175ConnectorsUpto280Amps

Wiressizesfrom10to1/0AWG(5.3to50mm2)fitin thesecondtolargestconnectorintheSB?series.The 3poleSB?175addsanadditionalpositionforpower orgrounding.AllMultipolewireconnectorhousings aregenderlessandmatetothemselvesminimizing inventoryandassemblycomplex

APP

Anderson Power Products, Inc.

P949-BK

SB?175ConnectorsUpto280Amps

Wiressizesfrom10to1/0AWG(5.3to50mm2)fitin thesecondtolargestconnectorintheSB?series.The 3poleSB?175addsanadditionalpositionforpower orgrounding.AllMultipolewireconnectorhousings aregenderlessandmatetothemselvesminimizing inventoryandassemblycomplex

APP

Anderson Power Products, Inc.

PRF949

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PRF949

NPNSiliconRFTransistor

NPNSiliconRFTransistor Preliminarydata ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA ●fT=9GHz F=1dBat1GHz

ZHAOXINGWEI

Zhaoxingwei Electronics ., Ltd

PRF949

UHFwidebandtransistor

DESCRIPTION SiliconNPNtransistorinasurfacemount3-pinSOT416(SC-75)package.ThetransistorisprimarilyintendedforwidebandapplicationsintheGHzrangeintheRFfrontendofanaloganddigitalcellulartelephones,cordlessphones,radardetectors,pagersandsatelliteTV-tuners. FEA

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    FZT949QTA

  • 制造商：

    Diodes Incorporated

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個(gè)

  • 系列：

    Automotive, AEC-Q101

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 晶體管類型：

    PNP

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降（最大值）：

    440mV @ 500mA，5.5A

  • 電流 - 集電極截止（最大值）：

    50nA

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)（最小值）：

    100 @ 1A，1V

  • 頻率 - 躍遷：

    100MHz

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    TO-261-4，TO-261AA

  • 供應(yīng)商器件封裝：

    SOT-223-3

  • 描述：

    PWR LOW SAT TRANSISTOR SOT223 T\u0026

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
DIODES/美臺(tái)
20+
SOT-223
120000
原裝正品 可含稅交易
 詢價(jià)
DIODES
23+
SOT-223
131231
原裝正品現(xiàn)貨
 詢價(jià)
DIODES/美臺(tái)
22+
SOT-223
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
 詢價(jià)
DIODES/美臺(tái)
23+
NA
6000
原裝正品假一罰百!可開(kāi)增票!
 詢價(jià)
DIODES/美臺(tái)
23+
SOT-223
50000
原裝正品 支持實(shí)單
 詢價(jià)
24+
N/A
51000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
Diodes Incorporated
24+
TO-261-4 TO-261AA
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
DIODES/美臺(tái)
23+
SOT-223
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
ZETEX
24+
SOT-223
7730
新進(jìn)庫(kù)存/原裝
 詢價(jià)
ZETEX
23+
SOT-223
30000
原裝正品,假一罰十
 詢價(jià)
更多FZT949QTA供應(yīng)商 更新時(shí)間2025-1-18 14:00:00

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