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GC1310

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GC1310

ENHANCED PERFORMANCE SURFACE MOUNT EPSM??yperabrupt Varactor Diodes TM

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GDT1310

GateDriverTransformerType:GDT>Series>

SUMIDASumida America Components Inc.

勝美達(dá)電子

GDT1310

GENERALPRODUCTSCATALOG

SUMIDASumida America Components Inc.

勝美達(dá)電子

HMIGTO1310

Advancedtouchscreenpanel,HarmonyGTO,320x240pixelsQVGA,3.5TFT,96MB

SCHNEIDERSchneider Electric

施耐德施耐德電氣

HMIGTO1310FC

Advancedtouchscreenpanel,HarmonyGTO,3.5ColorTouchQVGATFT,coateddisplay

SCHNEIDERSchneider Electric

施耐德施耐德電氣

HMIGTO1310FCW

Advancedtouchscreenpanel,HarmonyGTO,3.5ColorTouchQVGATFT,coateddisplaywithoutlogo

SCHNEIDERSchneider Electric

施耐德施耐德電氣

HMIGTO1310FW

Advancedtouchscreenpanel,HarmonyGTO,3.5ColorTouchQVGATFT,logoremoved

SCHNEIDERSchneider Electric

施耐德施耐德電氣

HW1310ALPL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HW1310BKPL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310AL

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HWCHAS1310BK

RealWalnutChassisw/AluminumTop

KeyFeatures: Heavydutyconstructionwalnutchassis(seecornerdetailphotobelow). Toppanelavailableinachoiceofnaturalaluminumorsatinblackpowderpaintfinish. Walnutchassisis0.778inchesthick(19.8mm)-cornersareproducedwithwoodbracing &dovetailconstructionmethods

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

HY1310D

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

HY1310U

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

HY1310V

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

華羿微電華羿微電子股份有限公司

IIRF1310N

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.036? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310N

N-ChannelMOSFETTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.036? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1310NL

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF1310NL

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    GC1310

  • 制造商：

    MICROSEMI

  • 制造商全稱：

    Microsemi Corporation

  • 功能描述：

    ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM

供應(yīng)商型號品牌批號封裝庫存備注價格
Microchip
21+
15000
只做原裝
 詢價
microchipdirect
23+
15423
原包裝原標(biāo)現(xiàn)貨,假一罰十,
 詢價
24+
N/A
75000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
2126+
985
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
Winchen
23+
SOP16
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
WINCHEN
23+
SOP16
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
Winchen
202172
SOP16
2600
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
WINCHEN
22+
SOP16
34000
只做原裝進(jìn)口現(xiàn)貨
 詢價
Winchen
24+
SOP16
9000
只做原裝正品 有掛有貨 假一賠十
 詢價
2023+
3000
進(jìn)口原裝現(xiàn)貨
 詢價
更多GC1310供應(yīng)商 更新時間2025-1-11 14:36:00

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