GE28F640L30B110中文資料英特爾數(shù)據(jù)手冊PDF規(guī)格書

The 1.8 Volt Intel StrataFlash? wireless memory with 3-Volt I/O product is the latest generation of Intel StrataFlash? memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-voltage, multilevel cell (MLC) technology.

■ High performance Read-While-Write/Erase

— 85 ns initial access

— 52MHz with zero wait state, 17 ns clock-to-data

output synchronous-burst mode

— 25 ns asynchronous-page mode

— 4-, 8-, 16-, and continuous-word burst mode

— Burst suspend

— Programmable WAIT configuration

— Buffered Enhanced Factory Programming

(Buffered EFP): 3.5 μs/byte (Typ)

— 1.8 V low-power buffered and non-buffered

programming @ 10 μs/byte (Typ)

■ Architecture

— Asymmetrically-blocked architecture

— Multiple 8-Mbit partitions: 64Mb and 128Mb

devices

— Multiple 16-Mbit partitions: 256Mb devices

— Four 16-KWord parameter blocks: top or

bottom configurations

— 64K-Word main blocks

— Dual-operation: Read-While-Write (RWW) or

Read-While-Erase (RWE)

— Status register for partition and device status

■ Power

— 1.7 V - 2.0 V VCC operation

— I/O voltage: 2.2 V - 3.3 V

— Standby current: 30 μA (Typ)

— 4-Word synchronous read current: 17 mA (Typ) @ 54 MHz

— Automatic Power Savings (APS) mode