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首頁 >GSMBT9014>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
GSMBT9014	文件：195.2 Kbytes Page：3 Pages	NPN EPITAXIAL TRANSISTOR	GTMGTM CORPORATION 勤益投資控股勤益投資控股股份有限公司	GTM
GSMBT9014	文件：197.71 Kbytes Page：3 Pages	N P N E P I T A X I A L T R A N S I S T O R	ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司	ETL
H9014	文件：143.97 Kbytes Page：2 Pages	NPNSILICONTRANSISTOR PRE-AMPLIFIER，LOWLEVEL&LOWNOISE	HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司	Huashan
HCS9014	文件：215.21 Kbytes Page：4 Pages	GENERALPURPOSETRANSISTOR	HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰電子有限公司	HOTTECH
HE9014	文件：43.48 Kbytes Page：4 Pages	NPNEPITAXIALPLANARTRANSISTOR Description TheHE9014isdesignedforuseinpre-amplifieroflowlevelandlownoise. Features ?HighTotalPowerDissipation(PD:450mW) ?ComplementarytoHE9015 ?HighhFEandGoodLinearity	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
HMBT9014	文件：50.44 Kbytes Page：5 Pages	NPNEPITAXIALPLANARTRANSISTOR Description TheHMBT9014isdesignedforuseinpre-amplifieroflowlevelandlownoise. Features ?HighTotalPowerDissipation(PD:225mW) ?ComplementarytoHMBT9015 ?HighhFEandGoodLinearity	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
HN9014	文件：369.5 Kbytes Page：5 Pages	NPNSiliconEpitaxialPlanarTransistorforswitchingandAFamplifierapplications????????? NPNSiliconEpitaxialPlanarTransistorforswitchingandAFamplifierapplications	SEMTECH Semtech Corporation	SEMTECH
IRFD9014	文件：177.51 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-1.1A)	IRF International Rectifier	IRF
IRFD9014	文件：839.16 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFD9014	文件：858.54 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?ForautomaticInsertion ?Endstackable ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFD9014	文件：831.83 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?ForautomaticInsertion ?Endstackable ?P-channel ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFD9014PBF	文件：839.16 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFD9014PBF	文件：1.79963 Mbytes Page：8 Pages	HEXFET?POWERMOSFET	IRF International Rectifier	IRF
IRFD9014PBF	文件：858.54 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFL9014	文件：222.81 Kbytes Page：8 Pages	PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-1.8A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin	IRF International Rectifier	IRF
IRFL9014	文件：1.03697 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFL9014	文件：790.32 Kbytes Page：8 Pages	RepetitiveAvalancheRated Description TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechniques.Itsuniquepackagedesignallowsforeasyautomaticpick-andplaceaswithotherSOTorSOICpackagesbuthastheaddedadvantageofimprovedthermalperformanceduetoanenla	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFL9014	文件：177.41 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFL9014	文件：174.72 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerationpower	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFL9014	文件：399.22 Kbytes Page：7 Pages	-60VP-ChannelMOSFET Description TheSOT-223packageisdesignedforsurface-mounting usingvaporphase,infrared,orwavesolderingtechniques. Itsuniquepackagedesignallowsforeasyautomaticpickand- placeaswithotherSOTorSOPpackagesbuthasthe addedadvantageofimprovedthermalperformancedueto	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體	EVVOSEMI

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詳細參數(shù)

型號：
GSMBT9014
制造商：
GTM
制造商全稱：
GTM
功能描述：
NPN EPITAXIAL TRANSISTOR

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市永貝爾科技有限公司	GSMBT9014	GTM	23+	NA	39960	只做進口原裝,終端工廠免費送樣	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	GSMBT9015	GTM	23+	SOT-323	863000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳兆威電子有限公司	GSMBTA05	GTM	23+	SOT-323	81000	原裝正品現(xiàn)貨	詢價
深圳市弘為電子有限公司	GSMBUZZERNOK1100		24+	原廠封裝	5000	原裝現(xiàn)貨假一罰十	詢價

更多GSMBT9014供應商更新時間2025-1-17 14:26:00

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